Dual-mode high gain and high-Q active RF band pass filter

Author

Rahmatollahi, Shoeib ; Fotouhi, B. ; Jannesari, Abumoslem

Author_Institution

Tarbiat Modares Univ., Tehran, Iran

fYear

2013

fDate

14-16 May 2013

Firstpage

1

Lastpage

5

Abstract

In this paper, a 4^th-order dual-mode active filter was implemented in 0.18μm CMOS process. Center frequency changed from 2.3 GHz to 2.7 GHz in band-select and channel-select modes. Quality factor was 25-100 with 17 dB Gain for band-select mode and 100-500 with 40 dB Gain in channel-select mode. Novel method for tuning Q was designed based on changing NIC factor. Center frequency deviations were compensated for by an analog input. Filter power consumption and input reflection ratio were 6.45 mW and -14 dB, respectively. The main application of this filter was for IEEE 802.11 receivers.

Keywords

CMOS integrated circuits; Q-factor; active filters; band-pass filters; power consumption; radio receivers; radiofrequency filters; 4th-order dual-mode active filter; CMOS process; NIC factor; band-select mode; center frequency deviations; channel-select mode; dual-mode high gain RF band pass filter; filter power consumption; frequency 2.3 GHz to 2.7 GHz; high-Q active RF band pass filter; quality factor; size 0.18 mum; Band-pass filters; Frequency control; Gain; Microwave filters; Q-factor; Voltage control; 4th-order filter; Active RF filter; Dual-mode; NIC (Negative Impedance Convertor);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2013 21st Iranian Conference on

Conference_Location

Mashhad

Type

conf

DOI

10.1109/IranianCEE.2013.6599861

Filename

6599861