DocumentCode :
3051370
Title :
A MEMS Probe Card with High Aspect Ratio Electroplated Posts
Author :
Kim, Bong-Hwan ; Park, Bum-Jin ; Kum, Byung-Hoon ; Kim, Jong-Bok
Author_Institution :
UniTest Inc., Gyeonggi
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
482
Lastpage :
483
Abstract :
In this paper, a MEMS probe card developed with high aspect ratio post in order to implement high speed and high frequency testing and reduce thermal deformation effect during hot test of device under test (DUT) is discussed. High aspect ratio posts were fabricated by nickel electroplating after silicon etching and oxidation performed by a deep RIE etcher and furnace, respectively. Probe card makes contact with the metal pads of the DUT, thereby transmitting the test signals to the DUT. According to reliability test, there was no mechanical bending to cantilever beam and position difference to tips after the 350,000 time touchdowns. The proposed probe card is suitable for wafer-level testing and fine pitch device testing.
Keywords :
cantilevers; electroplating; elemental semiconductors; micromechanical devices; nickel; oxidation; reliability; semiconductor device testing; silicon; sputter etching; MEMS probe card; Ni; Si; cantilever beam; deep RIE etching; device under test; fine pitch device testing; high speed-high frequency testing; mechanical bending; nickel electroplating; oxidation; reliability test; silicon etching; thermal deformation effect; wafer-level testing; Etching; Frequency; Furnaces; Micromechanical devices; Nickel; Oxidation; Probes; Silicon; Structural beams; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456314
Filename :
4456314
Link To Document :
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