DocumentCode
3051601
Title
An efficient DELOTS Algorithm for low leakage current at nano-scale transistor
Author
Rjoub, Abdoul ; Almanasrah, Hassan ; Kattab, Shihab Ahmed
Author_Institution
Comput. Eng. Dept., Univ. of Sci. & Technol., Irbid, Jordan
fYear
2011
fDate
6-8 Dec. 2011
Firstpage
1
Lastpage
6
Abstract
The current switching from μ-technology to n-technology generated a new challenges for CMOS circuit design. The optimization of power and delay together becomes the main issue in CMOS circuits design. Based on transistor level, a new algorithm for optimizing the Power Delay Product (PDP) for digital CMOS circuits is proposed in this paper. This algorithm is composed of three models: Graph Model (GM), Mathematical Model (MM) and Heuristic Model (HM). These Models work homogeneously to enhance the circuit performance (Delay) and reduce the circuit power dissipation (leakage) by selecting the optimal width size for each transistor in the circuit. All the measurements and simulation results of the new approach have been performed under 22nm BSIM4 Foundries. The average improvement in PDP was 31% for Full Adder circuit of 24 transistors and 43% for C17 ISIAC benchmark.
Keywords
CMOS digital integrated circuits; MOSFET; heuristic programming; leakage currents; nanoelectronics; circuit performance; circuit power dissipation; digital CMOS circuit; efficient DELOTS algorithm; full adder circuit; graph model; heuristic model; low leakage current; mathematical model; nanoscale transistor; power delay product; CMOS integrated circuits; Delay; Integrated circuit modeling; Mathematical model; Optimization; Semiconductor device modeling; Transistors; DELOTS Algorithm; Delay Time Optimization; Leakage Optimization; Low Power Design; PDP Optimization;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Electrical Engineering and Computing Technologies (AEECT), 2011 IEEE Jordan Conference on
Conference_Location
Amman
Print_ISBN
978-1-4577-1083-4
Type
conf
DOI
10.1109/AEECT.2011.6132517
Filename
6132517
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