• DocumentCode
    3051601
  • Title

    An efficient DELOTS Algorithm for low leakage current at nano-scale transistor

  • Author

    Rjoub, Abdoul ; Almanasrah, Hassan ; Kattab, Shihab Ahmed

  • Author_Institution
    Comput. Eng. Dept., Univ. of Sci. & Technol., Irbid, Jordan
  • fYear
    2011
  • fDate
    6-8 Dec. 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The current switching from μ-technology to n-technology generated a new challenges for CMOS circuit design. The optimization of power and delay together becomes the main issue in CMOS circuits design. Based on transistor level, a new algorithm for optimizing the Power Delay Product (PDP) for digital CMOS circuits is proposed in this paper. This algorithm is composed of three models: Graph Model (GM), Mathematical Model (MM) and Heuristic Model (HM). These Models work homogeneously to enhance the circuit performance (Delay) and reduce the circuit power dissipation (leakage) by selecting the optimal width size for each transistor in the circuit. All the measurements and simulation results of the new approach have been performed under 22nm BSIM4 Foundries. The average improvement in PDP was 31% for Full Adder circuit of 24 transistors and 43% for C17 ISIAC benchmark.
  • Keywords
    CMOS digital integrated circuits; MOSFET; heuristic programming; leakage currents; nanoelectronics; circuit performance; circuit power dissipation; digital CMOS circuit; efficient DELOTS algorithm; full adder circuit; graph model; heuristic model; low leakage current; mathematical model; nanoscale transistor; power delay product; CMOS integrated circuits; Delay; Integrated circuit modeling; Mathematical model; Optimization; Semiconductor device modeling; Transistors; DELOTS Algorithm; Delay Time Optimization; Leakage Optimization; Low Power Design; PDP Optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Electrical Engineering and Computing Technologies (AEECT), 2011 IEEE Jordan Conference on
  • Conference_Location
    Amman
  • Print_ISBN
    978-1-4577-1083-4
  • Type

    conf

  • DOI
    10.1109/AEECT.2011.6132517
  • Filename
    6132517