Title :
Progress and future prospects of group III nitride semiconductors
Author :
Akasaki, Isamu ; Amano, Hideharu
Author_Institution :
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
Abstract :
Summary form only given. This paper reviews the recent progress of crystal growth, conductivity control and short wavelength light emitters of group III nitrides. Future prospects of nitride-based light emitters such as LEDs and laser diodes will also be discussed.
Keywords :
III-V semiconductors; epitaxial growth; light emitting diodes; optical fabrication; reviews; semiconductor growth; semiconductor lasers; conductivity control; crystal growth; group III nitride semiconductors; group III nitrides; nitride-based light emitters; reviews; short wavelength light emitters; Conducting materials; Conductivity; Crystallization; Impurities; Light emitting diodes; Optical materials; Semiconductor diodes; Semiconductor materials; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565092
