Title :
High efficiency 1.3 μm strained multi-quantum well lasers entirely grown by MOVPE for passive optical network use
Author :
Nakamura, T. ; Tsuruoka, K. ; Fukushima, K. ; Uda, A. ; Hosono, Y. ; Kurata, K. ; Torikai, T.
Author_Institution :
KANSAI Electron. Res. Lab., NEC Corp., Otsu, Japan
Abstract :
A high efficiency of 0.4 W/A at 85°C, the highest ever reported for InGaAsP MQW-LDs entirely grown by MOVPE, was realized. The efficiency change was a low 2.5 dB over -40 to +85°C for a surface-mount module
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; μm strained multi-quantum well lasers; -40 to 85 C; 1.3 mum; InGaAsP; InGaAsP MQW-LDs; MOVPE; efficiency change; passive optical network; surface-mount module; Electrons; Epitaxial growth; Epitaxial layers; Passive optical networks; Temperature dependence; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565095
