A symmetric double-core InGaAlAs waveguide photodiode for hybrid integration on optical platforms

Author

Shishikura, M. ; Nakamura, H. ; Tanaka, S. ; Matsuoka, Y. ; Ono, T. ; Miyazaki, T. ; Tsuji, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

12

Abstract

A symmetric InGaAlAs waveguide photodiode for low cost modules is investigated. A high responsivity of 0.95 A/W and a low dark current after 1900 hours aging of 300 pA are demonstrated. In this paper, we optimize the symmetric doublecore structure for higher responsivity while maintaining a wide coupling tolerance at a low operating voltage. We also describe the use of a surface passivation technique to achieve low dark current operation over a wide temperature range and after aging at 200 C.

Keywords

III-V semiconductors; ageing; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; life testing; modules; optical communication equipment; optical waveguides; photodiodes; semiconductor device testing; symmetry; 1900 h; 300 pA; InGaAlAs; aging; high responsivity; higher responsivity; hybrid integration; low cost modules; low dark current; low dark current operation; low operating voltage; optical platforms; surface passivation technique; symmetric InGaAlAs waveguide photodiode; symmetric double-core InGaAlAs waveguide photodiode; symmetric doublecore structure; wide coupling tolerance; wide temperature range; Aging; High speed optical techniques; Integrated optics; Optical coupling; Optical devices; Optical surface waves; Optical waveguides; Photodiodes; Planar waveguides; Programmable control;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565097

Filename

565097