DocumentCode
3051748
Title
Fabrication of volcano-structured double-gate FEAs by etch-back technique
Author
Soda, T. ; Nagao, M. ; Yasumuro, C. ; Kanemaru, S. ; Sakai, T. ; Saito, N. ; Neo, Y. ; Aoki, T. ; Mimura, H.
Author_Institution
Shizuoka Univ., Hamamatsu
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
526
Lastpage
527
Abstract
Volcano-structured double-gate field emission display (VDG-FEA) is fabricated by etch-back technique. Electron trajectories from VDG-FEA are roughly calculated using charged particle trajectories simulation program SIMION.
Keywords
etching; field emission displays; SIMION program; VDG-FEA; charged particle trajectories simulation; electron trajectories; etch-back technique; volcano-structured double-gate field emission display; Current density; Degradation; Electrodes; Electron beams; Etching; Fabrication; Flat panel displays; Focusing; Hafnium; Niobium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456336
Filename
4456336
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