Experimental investigation of the electromagnetic fields at the aperture of a near-field scanning optical microscope

Author

Decca, R.S. ; Drew, H.D. ; Emison, K.L. ; Tabatabaei, S.

Author_Institution

Lab. for Phys. Sci., Maryland Univ., College Park, MD, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

34

Abstract

In this work we use an approach that allows a determination of the spatial distribution of the electromagnetic field in the near-field region of the near field scanning optical microscope (NSOM) probe. We studied a MBE grown sample, which contains a 9 nm AlAs layer embedded in a GaAs matrix. The optical contrast arises from the difference in the index of refraction of the two materials. Topography related contrast is avoided by studying a freshly cleaved surface. With the NSOM working in emission mode the reflected light was collected in the far field.

Keywords

III-V semiconductors; aluminium compounds; electromagnetic field theory; light polarisation; light reflection; optical microscopy; refractive index; 9 nm; AlAs; AlAs layer; GaAs; GaAs matrix; MBE grown sample; electromagnetic fields; emission mode; far field reflected light collection; freshly cleaved surface; index of refraction; near field scanning optical microscope probe; near-field region; near-field scanning optical microscope; near-field scanning optical microscope aperture EM fields; optical contrast; spatial distribution; topography related contrast; Apertures; Educational institutions; Electromagnetic fields; Optical imaging; Optical microscopy; Optical polarization; Optical refraction; Probes; Reflectivity; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565108

Filename

565108