Title :
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
Abstract :
The following topics were dealt with: crystal growth; semi-insulating III-V compounds; non-stoichiometric III-V compounds; defects in III-V compounds; low-dimensional structures; group III-V oxides; group III-nitrides; silicon carbide; wide gap II-VI compounds; devices
Keywords :
II-VI semiconductors; III-V semiconductors; crystal defects; crystal growth; semiconductor devices; semiconductor growth; silicon compounds; stoichiometry; wide band gap semiconductors; SiC; crystal growth; defects; devices; group III-V oxides; group III-nitrides; low-dimensional structures; nonstoichiometric III-V compounds; semi-insulating III-V compounds; wide gap II-VI compounds;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA, USA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785063
