A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm

Author

Erber, G. ; Bugge, F. ; Sebastian, J. ; Voge, K. ; Wenzel, H. ; Weyers, M.

Author_Institution

Ferdinand-Braun-Inst., Berlin, Germany

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

46

Abstract

High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser reliability; laser transitions; quantum well lasers; waveguide lasers; 1 cm; 1000 mum; 60 W; 800 nm; Al-free QW; AlGaAs; AlGaAs waveguides; CW-output power; GaAsP; InGaAsP; active region; high efficiency; high power; laser diodes; strained GaAsP-SQW; unstrained InGaAsP-SQW; very small far field angle; Current density; Diode lasers; Laser theory; Materials science and technology; Power lasers; Quantum well lasers; Reliability engineering; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565114

Filename

565114