DocumentCode
3051904
Title
Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique
Author
Fang, Z.Q. ; Reynolds, D.C. ; Look, D.C. ; Mier, M.G. ; Jones, R.L. ; Henry, R.L.
Author_Institution
Res. Center, Wright State Univ., Dayton, OH, USA
fYear
1998
fDate
1998
Firstpage
25
Lastpage
28
Abstract
Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950°C under As overpressure have been characterized. The 950°C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed
Keywords
Hall effect; III-V semiconductors; annealing; copper; deep levels; gallium arsenide; photoluminescence; semiconductor growth; thermally stimulated currents; zone melting; 950 degC; As overpressure; Cu incorporation; EL2 concentration; GaAs:Cu; annealing; semi-insulating GaAs; uniformity; vertical zone melting; Absorption; Annealing; Gallium arsenide; Impurities; Laboratories; Optical materials; Stimulated emission; Tail; Temperature; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785069
Filename
785069
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