Title :
Implant isolation study of In0.53Ga0.47As
Author :
Almonte, M. ; Yu, K.M. ; Haller, E.E. ; Ridgway, M.C. ; Hou, H. ; Mirecki-Millunchick, J.
Abstract :
Effects of implantation in In0.53Ga0.47As due to damage by implantation of Ne+ ions and to compensation by implantation of Fe+ ions are reported. The former only involves damage induced effects while the latter leads to damage and dopant induced compensation. In addition, the changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). The thermal stability of these damage and compensation induced effects producing implant isolation is discussed
Keywords :
III-V semiconductors; Rutherford backscattering; channelling; diffusion; gallium arsenide; indium compounds; ion implantation; secondary ion mass spectra; thermal stability; In0.53Ga0.47As:Fe; In0.53Ga0.47As:Ne; SIMS; channeling Rutherford backscattering; compensation; diffusion; implant isolation; ion implantation; lattice damage; thermal stability; Backscatter; Conductivity; Implants; Indium phosphide; Iron; Lattices; Mass spectroscopy; Rapid thermal annealing; Semiconductor materials; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785070
