The silicon lasers based on impurity state transitions

Author

Shastin, V.N. ; Pavlov, S.G. ; Zhukavin, R.Kh. ; Bekin, N.A. ; Hübers, H.W.

Author_Institution

Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

79

Lastpage

80

Abstract

The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from double donor and acceptor centers in bulk silicon as well as electrical current excitation by resonant tunneling in Si/SiGe heterostructures are discussed.

Keywords

Ge-Si alloys; elemental semiconductors; impurity states; resonant tunnelling; semiconductor lasers; silicon; submillimetre wave lasers; Si-SiGe; Si/SiGe heterostructures; double acceptor centers; double donor centers; electrical current excitation; impurity state transitions; intracenter optical transitions; optical excitation; resonant tunneling; shallow donors; silicon lasers; Bismuth; Free electron lasers; Impurities; Laser excitation; Laser theory; Laser transitions; Phonons; Pump lasers; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1421962

Filename

1421962