Title :
The electrical properties of irradiated silicon: semi-insulating silicon
Author :
Jones, B.K. ; McPherson, M. ; Santana, J.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
Abstract :
Clear experimental evidence is presented that irradiated silicon behaves electrically like semi-insulating GaAs and hence should be considered semi-insulating. The analysis follows that for a relaxation semiconductor
Keywords :
carrier lifetime; elemental semiconductors; minority carriers; radiation effects; silicon; I-V characteristics; Si; irradiated samples; minority carrier lifetime; relaxation semiconductor; semi-insulating silicon; Conductivity; Dielectric materials; Gallium arsenide; Insulation; Lattices; Physics; Radiative recombination; Semiconductor impurities; Semiconductor materials; Silicon;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785074
