• DocumentCode
    3051975
  • Title

    The electrical properties of irradiated silicon: semi-insulating silicon

  • Author

    Jones, B.K. ; McPherson, M. ; Santana, J.

  • Author_Institution
    Dept. of Phys., Lancaster Univ., UK
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Clear experimental evidence is presented that irradiated silicon behaves electrically like semi-insulating GaAs and hence should be considered semi-insulating. The analysis follows that for a relaxation semiconductor
  • Keywords
    carrier lifetime; elemental semiconductors; minority carriers; radiation effects; silicon; I-V characteristics; Si; irradiated samples; minority carrier lifetime; relaxation semiconductor; semi-insulating silicon; Conductivity; Dielectric materials; Gallium arsenide; Insulation; Lattices; Physics; Radiative recombination; Semiconductor impurities; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    0-7803-4354-9
  • Type

    conf

  • DOI
    10.1109/SIM.1998.785074
  • Filename
    785074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3051975