Title :
Carbon in semi-insulating gallium arsenide: a comparative study between FTIR, SSMS and CPAA
Author :
Alt, H.Ch. ; Wiedemann, B. ; Meyer, J.D. ; Michelmann, R.W. ; Bethge, K.
Author_Institution :
Physikalische Technik, Fachhochschule Munchen, Germany
Abstract :
Local vibrational mode absorption was used to investigate the electrically active fraction of C in semi-insulating GaAs. A strictly linear relationship to the total chemical C concentration measured by spark source mass spectrometry is found. Using charged particle activation analysis as a reference method, a new calibration factor f 77=(7.2±0.2)×1015 cm-1 for the absorption integral at 77 K is derived. Based on the temperature dependence of the absorption a calibration factor f300=(7.5±0.5)×1015 cm-1 is suggested for the room temperature measurement
Keywords :
Fourier transform spectra; III-V semiconductors; carbon; gallium arsenide; impurities; impurity absorption spectra; infrared spectra; localised modes; 77 K; C concentration; FTIR spectra; GaAs:C; calibration factor; charged particle activation analysis; electrically active C fraction; local vibrational mode absorption; semi-insulating GaAs; spark source mass spectrometry; temperature dependence; Activation analysis; Calibration; Chemical analysis; Electromagnetic wave absorption; Gallium arsenide; Hall effect; Infrared spectra; Mass spectroscopy; Optical scattering; Sparks;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785075