Title :
Large-area high-power THz emitter based on interdigitated electrodes
Author :
Dreyhaupt, A. ; Winnerl, S. ; Dekorsy, T. ; Helm, M.
Author_Institution :
Inst. fur Ionenstrahlphys. und Materforschung, Forschungszentrum Rossendorf, Dresden, Germany
fDate :
27 Sept.-1 Oct. 2004
Abstract :
We present a planar large-area photoconductor based on GaAs for impulsive generation of THz radiation. The device consists of an interdigitated electrode metal-semiconductor-metal structure (MSM) with 5 μm electrode spacing. The MSM structure is masked by an opaque metallization layer isolated from the MSM electrodes in a way that optical excitation takes place only in regions with unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to amplitudes that are 104 times higher than from the same MSM structure without second metallization layer.
Keywords :
III-V semiconductors; electrodes; gallium arsenide; photoconducting devices; photoemission; submillimetre wave devices; submillimetre wave generation; 5 micron; GaAs; GaAs compounds; MSM electrodes; MSM structure; THz radiation; constructive interference; high power THz emitter; impulsive generation; interdigitated electrodes; large area photoconductor; metal-semiconductor-metal structure; opaque metallization layer; optical excitation; unidirectional electric field; Acceleration; Electrodes; Gallium arsenide; Laser excitation; Metallization; Optical pulse generation; Optical pumping; Optical scattering; Photoconductivity; Stimulated emission;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1421964
