DocumentCode
3052109
Title
The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor
Author
Jones, K. ; Santana, J. ; McPherson, M.
Author_Institution
Dept. of Phys., Lancaster Univ., UK
fYear
1998
fDate
1998
Firstpage
68
Lastpage
71
Abstract
From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This is most apparent for P-SI-N or Schottky-SI-Ohmic diodes and the agreement improves after irradiation when the ratio of generation-recombination (g-r) centres to deep levels increases
Keywords
III-V semiconductors; deep levels; electron-hole recombination; gallium arsenide; surface recombination; GaAs; deep levels; electrical properties; generation-recombination centres; relaxation semiconductor; semi-insulating GaAs; Charge carrier density; Conductivity; Dielectric materials; Gallium arsenide; Physics; Radiation detectors; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785078
Filename
785078
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