DocumentCode
305213
Title
Low-temperature near-field spectroscopy of quantum dots
Author
Arakawa, Y. ; Toda, Y. ; Nagamune, Y. ; Ohtsu, M.
Author_Institution
Tokyo Univ., Japan
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
107
Abstract
We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; photoluminescence; semiconductor quantum dots; 18 K; GaAs; GaAs quantum dots; SiO/sub 2/-patterned GaAs (100) substrates; carrier diffusion monitoring; excitation light intensity; low-temperature near-field spectroscopy; metal organic chemical vapor deposition; nanoprobing techniques; photoluminescence spectra; selective epitaxial growth; Pixel; Spectroscopy; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565148
Filename
565148
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