Current-voltage characteristic of n-i-n structures made of semi-insulating GaAs

Author

Wu, J.

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

fYear

1998

fDate

1998

Firstpage

76

Lastpage

79

Abstract

The current-voltage characteristic of semi-insulating GaAs is investigated by measuring the leakage current between ohmic contacts on SI GaAs. The measurement was performed on both a low-dislocation and a high-dislocation substrate grown by the liquid encapsulated Czochralski method and in addition, on a low-temperature (LT) GaAs layer grown by molecular-beam epitaxy (MBE) at very low temperature. It was found that the substrate current conduction in the low voltage range was related to the excess carrier lifetime rather than the resistivity of the substrate

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; liquid phase epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor growth; GaAs; current-voltage characteristic; excess carrier lifetime; high-dislocation; leakage current; liquid encapsulated Czochralski method; low-dislocation; molecular-beam epitaxy; n-i-n structures; ohmic contacts; semi-insulating GaAs; substrate current conduction; Current measurement; Current-voltage characteristics; Gallium arsenide; Leakage current; Low voltage; Molecular beam epitaxial growth; Ohmic contacts; Performance evaluation; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785080

Filename

785080