Near field scanning optical microscopy measurements of optical intensity distributions in semiconductor channel waveguide

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

113

Abstract

NSOM measurements of the intensity distribution as a function of transverse position have been carried out on AlGaAs ridge waveguides. The measurements were compared with both effective index method (EIM) and beam propagation method (BPM) calculations; the BPM was in better agreement with our experimental results. Finally, an in situ measure of the spatial resolution, here /spl sim/60 nm, was achieved by comparing the measurements near the ridge edge with the BPM predictions.

Keywords

Helmholtz equations; III-V semiconductors; aluminium compounds; finite difference methods; gallium arsenide; intensity measurement; optical microscopy; optical variables measurement; optical waveguides; ridge waveguides; 830 nm; Al/sub 0.1/Ga/sub 0.9/As-Al/sub 0.3/Ga/sub 0.7/As; AlGaAs ridge waveguides; NSOM measurements; beam propagation method; effective index method; finite difference scheme; near field scanning optical microscopy; optical intensity distributions; ridge edge measurements; scalar Helmholtz equation; semiconductor channel waveguide; spatial resolution; transverse position dependence; Optical interferometry; Optical microscopy; Optical refraction; Optical surface waves; Optical variables control; Optical waveguides; Semiconductor laser arrays; Semiconductor waveguides; Spatial resolution; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565151

Filename

565151