DocumentCode
3052240
Title
Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs
Author
Haiml, M. ; Prasad, A. ; Morier-Genoud, F. ; Siegner, U. ; Keller, U. ; Weber, E.R.
Author_Institution
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear
1998
fDate
1998
Firstpage
101
Lastpage
104
Abstract
We have quantitatively studied the optical nonlinearity in annealed and in beryllium doped low-temperature grown (LT) GaAs. This study has been complemented by measurements of the temporal decay of the absorption modulation on the 20-fs time scale. Our results show that both be doping and annealing of LT GaAs yield a material with superior properties for ultrafast all-optical switching applications
Keywords
III-V semiconductors; annealing; beryllium; gallium arsenide; nonlinear optics; semiconductor doping; semiconductor epitaxial layers; 20 fs; GaAs:Be; SiC; absorption modulation; annealed; enhanced optical nonlinearity; temporal decay; ultrafast all-optical switching applications; ultrafast response times; Absorption; Annealing; Gallium arsenide; Optical losses; Optical modulation; Optical pulses; Pulse measurements; Pulse modulation; Time factors; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785085
Filename
785085
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