Photoluminescence at 1.5 μm of heavily Er-doped insulating films on Si

Author

Lanzerstorfer, S. ; Pedarnig, J.D. ; Gunasekaran, R.A. ; Bauerle, D. ; Jantsch, W.

Author_Institution

Inst. fur Halbleiterphys., Johannes Kepler Univ., Linz, Austria

fYear

1998

fDate

1998

Firstpage

169

Lastpage

172

Abstract

A comparison of the photoluminescence (PL) properties of Er-doped SiO₂, soda-lime glass, and ZBLAN glass films fabricated by pulsed-laser deposition (PLD) is given. The PL yield depends strongly on the host material. Under identical growth conditions and the same erbium concentrations in the targets, films deposited from the soda lime and ZBLAN glass show more than an order of magnitude higher luminescence yield. This enhancement is attributed to a higher concentration of optically active erbium in the multicomponent glass environment. Temperature quenching of the PL yield is observed for SiO₂:Er. The PL yield of soda-lime glass:Er and ZBLAN:Er increases with increasing temperature. A room temperature external quantum efficiency of 2×10^-4 was obtained for Er-doped soda-lime glass

Keywords

erbium; fluoride glasses; glass; insulating thin films; optical glass; photoluminescence; pulsed laser deposition; radiation quenching; silicon compounds; 1.5 mum; PL yield; Si; SiO₂-CaO-Na₂O:Er; SiO₂:Er; ZBLAN glass films; ZBLAN:Er; ZrF4-BaF2-LaF3-AlF3-NaF:Er; erbium concentrations; growth conditions; heavily Er-doped insulating films; luminescence yield; multicomponent glass environment; optically active erbium; photoluminescence; pulsed-laser deposition; room temperature external quantum efficiency; soda-lime glass:Er; temperature quenching; Chemical lasers; Erbium; Glass; Insulation; Optical films; Optical materials; Photoluminescence; Semiconductor films; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785101

Filename

785101