Title :
High power top-surface emitting vertical-cavity lasers
Author :
Grabherr, M. ; Weigl, B. ; Reiner, G. ; Miller, M. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
Summary form only given. We have fabricated top-emitting VCSELs grown by solid source MBE. Emission wavelength is about 990nm. The optimized p-type Be modulation doped Bragg-reflector consists of 24 pairs of quarter wavelength thick AlGaAs-GaAs layers, the n-Bragg-reflector is built of 30 pairs of AlAs-GaAs layers. The 3 active InGaAs quantum wells are embeded in GaAs barriers. Lateral current confinement is achieved by selective oxidation of a single 30 nm thick AlAs layer just above the active layers.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; semiconductor doping; semiconductor growth; surface emitting lasers; 30 nm; 990 nm; AlAs layer; AlAs-GaAs; AlAs-GaAs layers; AlGaAs-GaAs; GaAs barriers; InGaAs; active InGaAs quantum wells; active layers; emission wavelength; high power top-surface emitting vertical-cavity lasers; lateral current confinement; n-Bragg-reflector; optimized p-type Be modulation doped Bragg-reflector; quarter wavelength thick AlGaAs-GaAs layers; selective oxidation; solid source MBE; top-emitting VCSELs; Copper; Electrons; Gallium arsenide; Heat sinks; Oxidation; Power generation; Power lasers; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565198
