High frequency behavior of oxidized single-mode single polarization VCSELs with elliptical current aperture

Author

Fiedler, U. ; Wiedenmann, D. ; Weigl, B. ; Jung, C. ; Reiner, G. ; Buck, M. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

211

Abstract

For extremely high bit rate data transmission, laser sources with dynamically stable linearly polarized single-mode light output are desirable. We have fabricated oxidized VCSELs with elliptical current aperture for stable linearly polarized single-mode light emission and investigated their RF-behavior. The InGaAs-QW VCSEL structure is grown on <100> GaAs substrate. S-parameter and spectral relative intensity noise measurement give consistent results and yield both a K-factor of 0.468 ns equivalent to 19 GHz intrinsic modulation bandwidth.

Keywords

S-parameters; laser cavity resonators; laser modes; laser noise; laser stability; light polarisation; optical transmitters; quantum well lasers; spectral line intensity; surface emitting lasers; 19 GHz; <100> GaAs substrate; GaAs; InGaAs-GaAs; InGaAs-QW VCSEL structure; K-factor; RF-behavior; S-parameter; dynamically stable linearly polarized single-mode light output; elliptical current aperture; extremely high bit rate data transmission; high frequency behavior; intrinsic modulation bandwidth; laser sources; oxidized single-mode single polarization VCSEL; spectral relative intensity noise measurement; Apertures; Bit rate; Data communication; Frequency; Gallium arsenide; Laser noise; Laser stability; Optical polarization; Scattering parameters; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565202

Filename

565202