Title :
AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%
Author :
Shatalov, M. ; Jinwei Yang ; Bilenko, Yuri ; Shur, M. ; Gaska, R.
Author_Institution :
Sensor Electron. Technol. Inc., Columbia, SC, USA
fDate :
June 30 2013-July 4 2013
Abstract :
Deep UV LED structures with UV transparent design, reflective p-electrodes and die encapsulation exhibited external quantum efficiency above 11%. Progress in material growth and device fabrication will be discussed along with issues further limiting efficiency.
Keywords :
III-V semiconductors; aluminium compounds; encapsulation; gallium compounds; light emitting diodes; optical design techniques; optical fabrication; reflectivity; transparency; wide band gap semiconductors; AlGaN; UV transparent design; deep UV LED; deep ultraviolet LED; die encapsulation; external quantum efficiency; material growth; reflective p-electrodes; Aluminum gallium nitride; Encapsulation; Light emitting diodes; Optical device fabrication; Optical reflection; Quantum well devices; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599920
