• DocumentCode
    3052585
  • Title

    Development of AlGaN DUV-LED

  • Author

    Ippommatsu, Masamichi ; Hirano, Akira ; Akasaki, I. ; Amano, Hideharu

  • Author_Institution
    UV Craftly Co., Ltd., Nagoya, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; wide band gap semiconductors; 50mW class AlGaN based deep ultraviolet light-emitting diodes; AlGaN; DUVLED; EQE; external quantum efficiency; power 50 mW; wavelength 255 nm to 355 nm; Aluminum gallium nitride; Cooling; Educational institutions; Light emitting diodes; Production; Resins;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6599921
  • Filename
    6599921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3052585