DocumentCode
305259
Title
Charge distribution in glasses exposed to intense bichromatic fields: controlling electronic transport properties with light
Author
Lawandy, Nabil M.
Volume
1
fYear
1996
fDate
18-19 Nov 1996
Firstpage
217
Abstract
A charge-selective etching process has been developed to directly map the trapped electron charge distribution in silicate glasses simultaneously exposed to fields at 532 nm and 1.06 μm. These measurements resulted in charge distributions responsible for second harmonic generation which are inconsistent with the predictions made by theories with a single directional flux
Keywords
electric charge; electron traps; etching; optical glass; optical harmonic generation; photoelectricity; 1.06 mum; 532 nm; charge distribution; charge-selective etching process; electronic transport properties control; intense bichromatic fields; light; second harmonic generation; silicate glasses; single directional flux; trapped electron charge distribution; Atomic force microscopy; Charge measurement; Current measurement; Electron traps; Etching; Frequency conversion; Glass; Laser beams; Lighting control; Polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565205
Filename
565205
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