Title :
Semiconductor-superlattice higher harmonic oscillator for generation of millimeter waves
Author :
Meier, A. ; Glukhovskoy, A. ; Jain, M. ; Stahl, B.I. ; Renk, K.F. ; Tranitz, P. ; Wegscheider, W.
Author_Institution :
Inst. fur Angewandte Phys., Regensburg Univ., Germany
fDate :
27 Sept.-1 Oct. 2004
Abstract :
This paper presents a GaAs/AlAs superlattice higher harmonic oscillator for generation of millimeter waves. The oscillator operated on the second harmonic around 130 GHz and was tunable by about 10 percent. Driven with a dc power of 30 milliwatts, the output power was about 10 microwatts.
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; gallium arsenide; harmonic generation; harmonic oscillators (circuits); millimetre wave generation; millimetre wave oscillators; semiconductor epitaxial layers; semiconductor superlattices; 10 muW; 130 GHz; 30 mW; GaAs-AlAs; GaAs-AlAs superlattice; cavity resonators; millimeter wave generation; second harmonic generation; second harmonic oscillator; semiconductor superlattices; superlattice electronic device; Frequency; Gallium arsenide; Lattices; Light emitting diodes; Microwave filters; Oscillators; Semiconductor diodes; Semiconductor superlattices; Superluminescent diodes; Voltage;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1421982
