• DocumentCode
    3052639
  • Title

    GaAs and SiC quantum wire arrays: fabrication and characterisation

  • Author

    Samuilov, V.A. ; Bashmakov, I.A. ; Butylina, I.B. ; Grigorieva, I.M. ; Ksenevich, V.K. ; Solovjova, L.V.

  • Author_Institution
    Belarus State Univ., Minsk, Russia
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC
  • Keywords
    Auger electron spectra; III-V semiconductors; arrays; gallium arsenide; masks; mesoscopic systems; self-assembly; semiconductor quantum wires; silicon compounds; sputter etching; wide band gap semiconductors; Auger electron spectroscopy; GaAs; GaAs surface; Si; SiC; complex liquids; fabrication; masks; mesoscopic ordered arrays; nitrocellulose solution; quantum wire arrays; reactive-ion-beam etching; self-organized patterning; semiconductor quantum wire arrays; Epitaxial growth; Fabrication; Gallium arsenide; Liquids; Network synthesis; Quantum dots; Scanning electron microscopy; Silicon carbide; Spectroscopy; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    0-7803-4354-9
  • Type

    conf

  • DOI
    10.1109/SIM.1998.785108
  • Filename
    785108