• DocumentCode
    3052742
  • Title

    Doping and segregation effects in AlGaN systems

  • Author

    Boguslawski, P. ; Bernholc, J.

  • Author_Institution
    Inst. Fizyki PAN, Acad. of Sci., Warsaw, Poland
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    233
  • Lastpage
    238
  • Abstract
    Doping properties of substitutional C, Si, Ge, Be, and Se impurities in wurtzite GaN and AlN are studied by quantum molecular dynamics. We investigate effects that potentially quench doping efficiency, namely the self-compensation and the compensation by native defects. We also predict a strong interfacial segregation of SeN , CN, and nitrogen vacancies at the AlN/GaN heterointerface towards the GaN layer
  • Keywords
    III-V semiconductors; aluminium compounds; beryllium; carbon; gallium compounds; germanium; molecular dynamics method; selenium; semiconductor doping; silicon; surface segregation; vacancies (crystal); AlN:Be; AlN:C; AlN:Ge; AlN:Se; AlN:Si; GaN:Be; GaN:C; GaN:Ge; GaN:Se; GaN:Si; doping efficiency; quantum molecular dynamics; segregation; self-compensation; substitutional impurities; vacancies; wurtzite; Aluminum gallium nitride; Capacitive sensors; Doping; Gallium nitride; Impurities; Light emitting diodes; Nitrogen; Optical materials; Photonic band gap; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    0-7803-4354-9
  • Type

    conf

  • DOI
    10.1109/SIM.1998.785114
  • Filename
    785114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3052742