Title :
Doping and segregation effects in AlGaN systems
Author :
Boguslawski, P. ; Bernholc, J.
Author_Institution :
Inst. Fizyki PAN, Acad. of Sci., Warsaw, Poland
Abstract :
Doping properties of substitutional C, Si, Ge, Be, and Se impurities in wurtzite GaN and AlN are studied by quantum molecular dynamics. We investigate effects that potentially quench doping efficiency, namely the self-compensation and the compensation by native defects. We also predict a strong interfacial segregation of SeN , CN, and nitrogen vacancies at the AlN/GaN heterointerface towards the GaN layer
Keywords :
III-V semiconductors; aluminium compounds; beryllium; carbon; gallium compounds; germanium; molecular dynamics method; selenium; semiconductor doping; silicon; surface segregation; vacancies (crystal); AlN:Be; AlN:C; AlN:Ge; AlN:Se; AlN:Si; GaN:Be; GaN:C; GaN:Ge; GaN:Se; GaN:Si; doping efficiency; quantum molecular dynamics; segregation; self-compensation; substitutional impurities; vacancies; wurtzite; Aluminum gallium nitride; Capacitive sensors; Doping; Gallium nitride; Impurities; Light emitting diodes; Nitrogen; Optical materials; Photonic band gap; Silicon compounds;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785114
