AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]

To satisfy the demand for material film structures for the fabrication of blue and green light emitting diodes and lasers, we developed metalorganic chemical vapor deposition (MOCVD) reactors for various batch sizes. All these reactors are capable of depositing GaInAlN material films. For the growth of single crystalline semiconductor films with a large band gap, process temperatures in excess of 1000/spl deg/C are required. Such temperatures have not been encountered in MOCVD for optoelectronic films before. Consideration of the nature of the MOCVD process forced a thermal optimization of the reactors in order to prevent unstable chemical compounds-in particular the precursors trimethylindium and tri(m)ethylgallium from suffering premature decomposition. The grown materials were characterized using photoluminescence mapping, spectrometry and sheet resistivity measurements.