Optical properties of GaInN/GaN heterostructures and quantum wells

Author

Wetzel, C. ; Takeuchi, T. ; Nitta, S. ; Yamaguchi, S. ; Amano, Hideharu ; Akasaki, I.

Author_Institution

Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan

fYear

1998

fDate

1998

Firstpage

239

Lastpage

242

Abstract

Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution ΔE=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP_z/dε_zz=0.3 C/m ² is obtained corresponding to e₁₄=0.1 C/m² and an equilibrium polarization of GaN of P_eq=43 mCm ² is extrapolated in qualitative agreement with recent calculations

Keywords

III-V semiconductors; energy gap; gallium compounds; indium compounds; photoluminescence; photoreflectance; piezoelectricity; semiconductor heterojunctions; semiconductor quantum wells; Franz-Keldysh oscillations; GaInN-GaN; bandgap energy; electronic bandstructure; equilibrium polarization; multiple quantum well; photoluminescence; photoreflection; piezoelectric coefficient; piezoelectric fields; strained heterostructures; Capacitive sensors; Energy resolution; Gallium nitride; Luminescence; Optical films; Photoluminescence; Photonic band gap; Piezoelectric films; Spatial resolution; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785115

Filename

785115