• DocumentCode
    3052848
  • Title

    Direct generation of Ince-Gaussian beam in Cr, Nd:YAG self-Q-switched microchip laser

  • Author

    Jun Dong ; Xiao Zhou ; Guozhang Xu

  • Author_Institution
    Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Direct generation of higher-order Ince-Gaussian (IG) beams in laser-diode end-pumped Cr, Nd:YAG self-Q-switched microchip laser was achieved with high efficiency and high repetition rate.
  • Keywords
    Q-switching; chromium; laser beams; microchip lasers; neodymium; optical pumping; yttrium compounds; YAG:Cr,Nd; direct generation; higher-order Ince-Gaussian beams; laser-diode end-pumped; self-Q-switched microchip laser; Laser beams; Laser excitation; Laser modes; Microchip lasers; Power generation; Power lasers; Pump lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6599935
  • Filename
    6599935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3052848