• DocumentCode
    305285
  • Title

    Tensile and compressive strain in GaInP lasers at 637 nm: the role of the sublinear gain-current relationship

  • Author

    Smowton, P.M. ; Blood, P. ; Mogensen, P.C. ; Bour, D.P.

  • Author_Institution
    DEpt. of Phys. & Astron., Univ. of Wales, Cardiff, UK
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Nov. 1996
  • Firstpage
    274
  • Abstract
    Measured threshold currents of tensile and compressively strained lasers show that differences between 637 nm devices are due chiefly to the internal mode loss and recombination current rather than gain saturation in thin compressively strained structures.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; optical losses; optical saturation; quantum well lasers; 637 nm; GaInP; GaInP lasers; compressive strain; gain saturation; internal mode loss; recombination current; sublinear gain-current relationship; tensile strain; thin compressively strained structures; threshold currents; Biomedical optical imaging; Current measurement; Gain measurement; Laser modes; Laser theory; Optical saturation; Quantum well lasers; Radiative recombination; Tensile strain; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-3160-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1996.565237
  • Filename
    565237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=305285