Title :
Tensile and compressive strain in GaInP lasers at 637 nm: the role of the sublinear gain-current relationship
Author :
Smowton, P.M. ; Blood, P. ; Mogensen, P.C. ; Bour, D.P.
Author_Institution :
DEpt. of Phys. & Astron., Univ. of Wales, Cardiff, UK
Abstract :
Measured threshold currents of tensile and compressively strained lasers show that differences between 637 nm devices are due chiefly to the internal mode loss and recombination current rather than gain saturation in thin compressively strained structures.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; optical losses; optical saturation; quantum well lasers; 637 nm; GaInP; GaInP lasers; compressive strain; gain saturation; internal mode loss; recombination current; sublinear gain-current relationship; tensile strain; thin compressively strained structures; threshold currents; Biomedical optical imaging; Current measurement; Gain measurement; Laser modes; Laser theory; Optical saturation; Quantum well lasers; Radiative recombination; Tensile strain; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565237
