High power visible laser diode arrays

Author

Savolainen, P. ; Pessa, M. ; Heinemann, S. ; Daiminger, F.

Author_Institution

Tampere Univ. of Technol., Finland

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

276

Abstract

Interest in solid state materials, including chromium doped LiCaAlF/sub 6/ (LiCaF) and chromium doped LiSrAlF/sub 6/ (LiSaF), has created a need for pump diodes in the wavelength range of 650-690 nm. However, these visible laser diodes exhibit rather low output power due to high threshold current densities (J/sub th/), modest external quantum efficiency (/spl eta//sub d/) and low characteristic temperature (T/sub 0/). In this paper we report characteristics of GaInP/AlGaInP single quantum well visible laser arrays operating up to a CW peak power of 24 W at 675 nm, which are suitable for pumping solid state materials.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical pumping; quantum well lasers; semiconductor laser arrays; 24 W; 650 to 690 nm; 675 nm; CW peak power; GaInP-AlGaInP; GaInP/AlGaInP single quantum well visible laser arrays; LiCaAlF/sub 6/:Cr; LiSrAlF/sub 6/:Cr; external quantum efficiency; high power visible laser diode arrays; high threshold current densities; low characteristic temperature; output power; pump diodes; solid state materials; Chromium; Diode lasers; Optical arrays; Optical materials; Power generation; Semiconductor laser arrays; Solid state circuits; Temperature; Threshold current; Time of arrival estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565238

Filename

565238