DocumentCode
3052992
Title
Understanding and engineering of carrier transport in advanced MOS channels
Author
Takagi, Shinichi
Author_Institution
Sch. of Eng., Univ. of Tokyo, Tokyo
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
9
Lastpage
12
Abstract
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review the basic concept on the choice of channel materials for high performance MOSFETs and address several important issues on carrier transport properties of mobility-enhanced CMOSFETs, including the effects of uniaxial strain on Si n-MOSFETs and the critical issues on Ge/III-V MOSFETs.
Keywords
MOSFET; carrier mobility; MOS channels; MOSFET; carrier transport; mobility enhancement; CMOS technology; CMOSFETs; III-V semiconductor materials; MOSFET circuits; Uniaxial strain; Ge; III–V semiconductors; MOSFETs; channel; mobility; scattering; strain; subband; velocity;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648224
Filename
4648224
Link To Document