Title :
The 1.1 eV deep level in 4H-SiC
Author :
Mitchel, W.C. ; Perrin, R. ; Goldstein, J. ; Roth, M. ; Smith, S.R. ; Solomon, J.S. ; Evwaraye, A.O. ; Hobgood, H.M. ; Augustine, G. ; Balakrishna, V.
Author_Institution :
Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
Temperature dependent Hall effect and optical absorption measurements of vanadium doped semi-insulating 4H-SiC samples are reported along with optical admittance spectroscopy measurements of related material. In addition to the deep donor and acceptor levels of substitutional vanadium, EC-1.6 eV and EC-0.7 eV respectively, we report an additional level at 1.1 eV. This level has been seen in undoped 4H-SiC by optical admittance spectroscopy which has also detected a similar level at EC-1.0 eV in 6H-SiC, and by temperature dependent Hall effect in vanadium doped material. Optical absorption measurements of the vanadium intra-center absorption show that this level is not either of the two substitutional vanadium levels. SIMS measurements support the hypothesis that the 1.1 eV level is a complex of vanadium and another impurity, possibly titanium
Keywords :
Hall effect; deep levels; impurity absorption spectra; secondary ion mass spectra; silicon compounds; vanadium; wide band gap semiconductors; 0.7 eV; 1.1 eV; 1.1 eV deep level; 1.6 eV; 4H-SiC:V; SIMS measurements; SiC; acceptor levels; deep donor; intra-center absorption; optical absorption; optical admittance spectroscopy; temperature dependent Hall effect; Absorption; Admittance measurement; Annealing; Force measurement; Hall effect; Optical materials; Semiconductor materials; Silicon carbide; Spectroscopy; Temperature dependence;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785126
