Title :
Microsecond lasing delays in thin p-clad InGaAs QW lasers
Author :
Wu, C.H. ; Miester, C.F. ; Zory, P.S. ; Emanuel, M.A.
Abstract :
Microsecond lasing delays have been observed in wide-stripe, thin p-clad, InGaAs single quantum well (QW) lasers with "thick" p/sup +/ cap layers. Computer modeling indicates that localized refractive index changes in the cap layer due to ohmic heating from the contact resistance may be the root cause.
Keywords :
III-V semiconductors; claddings; contact resistance; delays; gallium arsenide; high-speed optical techniques; indium compounds; laser theory; quantum well lasers; refractive index; semiconductor device models; InGaAs; InGaAs single quantum well lasers; cap layer; computer modeling; contact resistance; localized refractive index changes; microsecond lasing delays; ohmic heating; p-clad InGaAs QW lasers; p/sup +/ cap layers; thin p-clad; wide-stripe; Current density; Delay; Heating; Indium gallium arsenide; Laser modes; Optical losses; Optical refraction; Optical variables control; Quantum well lasers; Refractive index;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565254
