The effects of blocking the lateral current flow in multiple-quantum-well ridge waveguide lasers

Author

Letal, G.J. ; Elenkrig, B.B. ; Simmons, J.G.

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

308

Abstract

The effect of blocking the lateral current flow in a multiple-quantum well InGaAsP-InP ridge waveguide laser is examined theoretically both for different ridge widths and for various transverse (growth direction) optical confinement factors. It is shown that depending on the optical confinement factor or on the number of wells, the blocking of the lateral current can either increase or decrease the threshhold current of the laser.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; InGaAsP-InP; InGaAsP-InP ridge waveguide laser; lateral current flow blocking effects; multiple-quantum-well ridge waveguide lasers; optical confinement factor; ridge widths; threshhold current; transverse growth direction optical confinement factors; well number; Laser modes; Laser theory; Optical losses; Optical materials; Optical pumping; Optical waveguides; Quantum well devices; Semiconductor lasers; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565255

Filename

565255