Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

Author

Luisier, Mathieu ; Klimeck, Gerhard

Author_Institution

Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

17

Lastpage

20

Abstract

Physics-based simulations are widely recognized as an helpful support to develop novel transistor structures. In this paper we describe a two-dimensional full-band and atomistic simulator. The sp³d⁵s* tight-binding model is used as bandstructure model. Our tool allows the treatment of realistically extended n- and p-doped double-gate field-effect transistors. The devices are designed according to the ITRS specifications for the 22 nm technology node. Different crystal and surface orientations are investigated and compared to the ITRS targets. The importance of including spin-orbit coupling in the bandstructure model is discussed for p-doped FETs.

Keywords

MOSFET; semiconductor device models; ITRS specifications; atomistic simulation; bandstructure model; double-gate MOSFET; full-band simulation; size 22 nm; spin-orbit coupling; tight-binding model; Charge carrier processes; Computational modeling; Computer networks; Double-gate FETs; Electronic mail; Intelligent networks; MOSFETs; Nanotechnology; Space technology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648226

Filename

4648226