Epitaxial growth and physics of nanostructures for quantum dot lasers

Author

Arakawa, Yasuhiko

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

318

Abstract

We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm) consists of an InGaAs quantum dot layer grown by the S-K growth mode with MOCVD, located between two AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors.

Keywords

distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 77 K; 985 nm; AlAs-Al/sub 0.2/Ga/sub 0.8/As; AlAs-Al/sub 0.2/Ga/sub 0.8/As distributed Bragg reflector mirrors; DBR laser mirrors; InGaAs; InGaAs quantum dot layer; MOCVD; S-K growth mode; epitaxial growth; microcavity; nanostructures; physics; quantum dot lasers; semiconductor growth; vertical microcavity quantum dot laser; Epitaxial growth; Indium gallium arsenide; Laser modes; Laser theory; MOCVD; Microcavities; Nanostructures; Physics; Quantum dot lasers; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565260

Filename

565260