Room temperature quantum dot lasers: From basic experiments to first device oriented structures

Author

Zaitsev, S.V. ; Gordeev, N.Yu. ; Ustinov, V.M. ; Zhukov, A.E. ; Egorov, A.Yu. ; Kochnev, I.V. ; Ledentsov, N.N. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Bimberg, D.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

320

Abstract

Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT and 85K, respectively in a quantum dot laser. Temperature dependence of the lasing wavelength and its value at RT show that such heterostructure lasers lasing via QD states. It is also proved by linear behaviour of the threshold current density vs. laser optical output losses dependence.

Keywords

current density; infrared spectra; quantum well lasers; semiconductor quantum dots; 300 K; 85 K; IR spectra; QD states; heterostructure lasers; laser optical output losses dependence; lasing wavelength; linear behaviour; oriented structures; quantum dot layer; room temperature quantum dot lasers; temperature dependence; threshold current density; Laser theory; Optical losses; Optical saturation; Quantum dot lasers; Radiative recombination; Stability; Stimulated emission; Temperature dependence; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565261

Filename

565261