Title :
Room temperature luminescence and 1 /spl mu/m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantum boxes formed by self-organized molecular beam
Author :
Phillips, J. ; Kamath, K. ; Sosnowski, T. ; Norris, T. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report here the observation of strong room temperature photoluminescence (PL) and junction laser operation (/spl lambda/=1 /spl mu/m) from self-organized InGaAs quantum dots grown by molecular beam epitaxy (MBE) on [001] GaAs substrates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; infrared spectra; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; 1 mum; GaAs; IR spectra; In/sub x/Ga/sub 1-x/As/GaAs quantum box lasers; InGaAs; MBE; [001] GaAs substrates; junction laser operation; molecular beam epitaxy; photoluminescence; quantum dot lasers; room temperature luminescence; self-organized InGaAs quantum dot lasers; self-organized molecular beam epitaxial growth; Gallium arsenide; Laboratories; Laser theory; Laser transitions; Luminescence; Molecular beam epitaxial growth; Quantum computing; Quantum dot lasers; Quantum dots; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565262
