Title :
Overcoming gain saturation in InAs/GaAs quantum dot lasers
Author :
Schmidt, Oliver G. ; Kirstaedter, N. ; Mao, M.-H. ; Ledentsov, Nikolay N. ; Bimberg, Dieter ; Ustinov, V.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of thermal coupling between carriers in different dots in a multi-layer structure is demonstrated.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; optical couplers; optical films; optical saturation; quantum well lasers; semiconductor quantum dots; InAs-GaAs; InAs-GaAs quantum dot lasers; InAs-GaAs quantum dots; carrier coupling; gain saturation; multi-layer structure; multiple layer stacking; thermal coupling; zero-dimensional laser structures; Charge carrier lifetime; Current density; Gallium arsenide; Laser modes; Laser theory; Optical coupling; Optical materials; Predictive models; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565264
