Title :
Monte Carlo investigation of potential fluctuation in 3D device structure
Author :
Ohkura, Y. ; Suzuki, C. ; Mise, N. ; Matsuki, T. ; Eimori, T. ; Nakamura, M.
Author_Institution :
Semicond. Leading Edge Technol., Inc., Tsukuba
Abstract :
The motions of particles are calculated in 3D structure to evaluate potential fluctuation. The results of homogeneous and thermal equilibrium systems are in good agreement with theoretical results. In 3D MOSFET, the potential fluctuation extends towards the depletion layer and deviation of the amplitude from theoretical value is observed and ascribed to hot electron energy distribution, so the conventional plasmon scattering model should be modified in non-uniform and non-equilibrium carrier distribution.
Keywords :
MOSFET; Monte Carlo methods; hot carriers; 3D MOSFET; 3D device structure; Monte Carlo investigation; depletion layer; homogeneous equilibrium systems; hot electron energy distribution; non-equilibrium carrier distribution; non-uniform carrier distribution; plasmon scattering model; thermal equilibrium systems; Doping; Electrons; Fluctuations; MOSFET circuits; Monte Carlo methods; Optical scattering; Particle scattering; Plasma simulation; Plasma temperature; Plasmons; Monte Carlo; inhomogeneou; nonequilibrium; potential fluctuation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648230
