DocumentCode
3053121
Title
A new built-in IDDQ testing method using programmable BICS
Author
Maltabas, Samed ; Ekekon, Osman Kubilay ; Margala, Martin
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Lowell, Lowell, MA, USA
fYear
2010
fDate
24-28 May 2010
Firstpage
264
Lastpage
264
Abstract
The paper presents a novel programmable Built In Current Sensor (BICS) topology in IBM 65 nm CMOS technology. Proposed topology has 2.086 GHz bandwidth and 38.9ps detection time. Moreover, a new built-in IDDQ test flow is proposed. Proposed test flow is applied to a charge pump. The results show 100% fault coverage for the defects that affects the output of the charge pump (CP). 97.87% overall fault coverage is achieved for the same test.
Keywords
CMOS integrated circuits; charge pump circuits; circuit testing; CMOS technology; IDDQ test flow; built in current sensor; built-in IDDQ testing; charge pump; fault coverage; programmable BICS; Bandwidth; Built-in self-test; CMOS technology; Charge pumps; Circuit faults; Circuit testing; Circuit topology; Paper technology; Phase locked loops; Switches; BICS; BIST; Charge Pump; Current Based Testing; DFT; IDDQ; Phase-Locked Loops; Programmability;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ETS), 2010 15th IEEE European
Conference_Location
Praha
ISSN
1530-1877
Print_ISBN
978-1-4244-5834-9
Electronic_ISBN
1530-1877
Type
conf
DOI
10.1109/ETSYM.2010.5512729
Filename
5512729
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