DocumentCode :
3053122
Title :
Investigations of population relaxation properties of hyperfine sublevels in 167Er3+ ions doped in a Y2SiO5 crystal
Author :
Hashimoto, Dieter ; Shimizu, Kazuo
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
We have established the lifetime t1 of the hyperfine sublevels of 167Er3+ ions in Y2SiO5 using spectral hole burning, measuring it as 37.8 + 8.9 ms at 2.25 K. Its temperature dependence varies as (1/T)n (n ~ 3).
Keywords :
erbium; optical hole burning; silicon compounds; yttrium compounds; Y2SiO5:167Er3+; hyperfine sublevels; population relaxation properties; spectral hole burning; temperature 2.25 K; Absorption; Ions; Optical pumping; Probes; Sociology; Statistics; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6599946
Filename :
6599946
Link To Document :
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