DocumentCode
3053122
Title
Investigations of population relaxation properties of hyperfine sublevels in 167Er3+ ions doped in a Y2 SiO5 crystal
Author
Hashimoto, Dieter ; Shimizu, Kazuo
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We have established the lifetime t1 of the hyperfine sublevels of 167Er3+ ions in Y2SiO5 using spectral hole burning, measuring it as 37.8 + 8.9 ms at 2.25 K. Its temperature dependence varies as (1/T)n (n ~ 3).
Keywords
erbium; optical hole burning; silicon compounds; yttrium compounds; Y2SiO5:167Er3+; hyperfine sublevels; population relaxation properties; spectral hole burning; temperature 2.25 K; Absorption; Ions; Optical pumping; Probes; Sociology; Statistics; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6599946
Filename
6599946
Link To Document