Title :
Metastable defects in CdMnTe:Ga
Author :
Szatkowski, J. ; Placzek-Popko, E. ; Sieranski, K. ; Bieg, B.
Author_Institution :
Inst. of Phys., Wroclaw Univ., Poland
Abstract :
Deep levels were studied in bulk Ga doped Cd0.99Mn0.01Te and Cd0.95Mn0.05 Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd0.95Mn0.05Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd0.99Mn0.01Te and 0.15 eV and 0.23 eV for the two levels in Cd0.95Mn0.05 Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials
Keywords :
cadmium compounds; deep levels; gallium; manganese compounds; metastable states; photoconductivity; semimagnetic semiconductors; 0.24 eV; 0.53 eV; Cd0.95Mn0.05Te; Cd0.95Mn0.05Te:Ga; Cd0.99Mn0.01Te; Cd0.99Mn0.01Te:Ga; CdMnTe:Ga; activation energies; by us; deep levels; electron traps; metastable defects; persistent photoconductivity; strong temperature dependent capture cross-sections; Electron traps; Energy capture; Gallium; Manganese; Metastasis; Photoconducting materials; Photoconductivity; Physics; Spectroscopy; Temperature dependence;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785132
