Title :
Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory
Author :
Song, Y.C. ; Liu, X.Y. ; Wang, Z.Y. ; Zhao, K. ; Du, G. ; Kang, J.F. ; Han, R.Q. ; Xia, Z.L. ; Kim, D. ; Lee, K.-H.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this work, a new efficient simulation method with comprehensive physical models is developed to evaluate the performance of CTM at various biases, temperatures, and gate stack configurations. The dominant physical mechanisms on the P/E/R operations of CTM are clarified.
Keywords :
random-access storage; charge trapping memory; comprehensive physical models; erase operation; program operation; retention operation; Dielectric materials; Electron traps; Energy loss; Microelectronics; Nonvolatile memory; Spontaneous emission; Temperature; Thermal factors; Tunneling; Voltage; Charge Trapping Memory; Non-volatile Memory; Simulation of Programming /Erasing/Retention Characteristics;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648232
