Title :
Low-threshold quantum dot injection laser emitting at 1.9 μm
Author :
Zhukov, E. ; Ustinov, V.M. ; Egorov, A.Yu. ; Kovsh, A.R. ; Zaitsev, S.V. ; Gordeev, N.Yu. ; Kopchatov, V.I. ; Ledentsov, N.N. ; Tsatsul´nikov, A.F. ; Volovik, B.V. ; Kop´ev, P.S. ; Alferov, Zh.I.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Self-organized InAs quantum dots inserted in an (In,Ga)As matrix lattice matched to an InP substrate were used as an active region of an injection laser. Laser action was observed up to 200 K. Low threshold (11.4 A/cm2) lasing at 1.894 μm (77 K) via the quantum dot states was realized. The ground-to-excited state transition with increasing threshold gain was observed. The quantum dot material gain of the order of 104 cm-1 was estimated
Keywords :
III-V semiconductors; indium compounds; quantum well lasers; semiconductor quantum dots; 1.894 mum; 1.9 mum; 200 K; 77 K; InAs; InGaAs; InP; active region; ground-to-excited state transition; increasing threshold gain; low-threshold quantum dot injection laser; quantum dot states; self-organized InAs quantum dots; Indium gallium arsenide; Indium phosphide; Laser theory; Laser transitions; Lattices; Quantum dot lasers; Substrates; Surface emitting lasers; Transmission line matrix methods; US Department of Transportation;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785134
